Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures
نویسندگان
چکیده
In this study, three samples of GaN/AlInN/AlN/Al2O3 high electron mobility (HEMT) structures are investigated with resolution X-ray diffraction (HR-XRD) technique. Peak positions and peak broadenings used in calculations, gained from rocking curves. Structural quality is determined symmetric asymmetric planes. Mosaic defects such as treadening dilocations (TDs), tilt twist angles, lateral vertical crystallite lengths by using Williamson Hall (WH) method. addition to these, surface morphology also atomic force microscopy (AFM). It noticed that crystal epitaxial layers decrease the order C, B A. Al compositions for A, C found %87.4, %86.6 %86.4, respectively Vegard’s law.
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ژورنال
عنوان ژورنال: Politeknik dergisi
سال: 2022
ISSN: ['1302-0900', '2147-9429']
DOI: https://doi.org/10.2339/politeknik.787700